K3918 datasheet на русском

K3918 datasheet на русском

2SK3918 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3918

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 29 W

Предельно допустимое напряжение сток-исток (Uds): 25 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 48 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 14 ns

Выходная емкость (Cd): 310 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm

Тип корпуса: TO251, MP3

2SK3918 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co

4.1. 2sk3911.pdf Size:193K _toshiba

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 500 ?A (VDS = 600 V) • Enhancement model: Vth = 2.0

2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless

Читать еще:  Анкерные болты по бетону размеры и цена

2SK3913-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles

2SK3917-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles

2SK3916-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless

2SK3915-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles

4.7. 2sk3919.pdf Size:97K _tysemi

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3919 TO-252 Unit: mm +0.1 6.50+0.15 2.30-0.1 -0.15 +0.8 5.30+0.2 0.50-0.7 -0.2 Features Low on-state resistance RDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A) 0.127 Low Ciss: Ciss = 2050 pF TYP. 0.80+0.1 max -0.1 5 V drive available 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source

Ссылка на основную публикацию
Adblock
detector