Buz11 datasheet на русском

Buz11 datasheet на русском

BUZ11 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUZ11

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 120 W

Предельно допустимое напряжение сток-исток (Uds): 50 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 36 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 1500 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm

Тип корпуса: TO220

BUZ11 Datasheet (PDF)

1.1. buz111sl.pdf Size:77K _update_mosfet

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

1.2. buz11al.pdf Size:332K _update_mosfet

1.3. buz111s.pdf Size:112K _update_mosfet

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

1.4. buz110s.pdf Size:88K _update_mosfet

BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 Ω TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

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1.6. buz11.pdf Size:173K _st

1.8. buz11.pdf Size:81K _fairchild_semi

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET � 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power � rDS(ON) = 0.040? (BUZ1 field effect transistor designed for applications such as � SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, � Nanosecond Switching Speed

1.9. buz110sl.pdf Size:104K _infineon

BUZ 110SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.01 RDS(on) ? � Enhancement mode Continuous drain current 80 A ID � Avalanche rated � Logic Level � dv/dt rated � 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube

1.10. buz111sl.pdf Size:101K _infineon

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.007 RDS(on) ? � Enhancement mode Continuous drain current 80 A ID � Avalanche rated � Logic Level � dv/dt rated � 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

1.11. buz111s.pdf Size:103K _infineon

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.008 RDS(on) ? � Enhancement mode Continuous drain current 80 A ID � Avalanche rated � dv/dt rated � 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

1.12. buz110s.pdf Size:126K _infineon

BUZ 110S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS � N channel Drain-Source on-state resistance 0.01 RDS(on) ? � Enhancement mode Continuous drain current 80 A ID � Avalanche rated � dv/dt rated � 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A

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